References of "Flynn, J"
     in
Bookmark and Share    
Full Text
Peer Reviewed
See detailLow Current Dispersion and Low Bias-stress Degradation of Unpassivated GaN/AlGaN/GaN/SiC HEMTs
Bernát, J.; Pierobon, R.; Marso, Michel UL et al

in Physica Status Solidi C. Current Topics in Solid State Physics (2005), 2(7), 2676-2679

The performance of unpassivated GaN/AlGaN/GaN/SiC HEMTs with intentionally undoped and doped barrier structures are extensively studied. No drain current dispersion between DC and 50 ns pulses on doped ... [more ▼]

The performance of unpassivated GaN/AlGaN/GaN/SiC HEMTs with intentionally undoped and doped barrier structures are extensively studied. No drain current dispersion between DC and 50 ns pulses on doped devices and less than 10% dispersion on undoped ones is observed. The full (100%) current recovery on undoped sample was measured in 1μs. The drain current extrapolated from 2 GHz large signal measurements corresponds to the measured static drain current confirming negligible current dispersion of our devices. Insignificant (<5 %) degradation in overall device performance parameters (IDs, gm, fT, fmax, Pout) on both undoped and doped structures after 12-hour-long bias stress was obtained. These results documents that suitable device performances can be obtained also on unpassivated GaN-based HEMTs. [less ▲]

Detailed reference viewed: 49 (0 UL)
Full Text
Peer Reviewed
See detailImpact of layer structure on performance of unpassivated AlGaN/GaN/SiC HEMTs,
Bernát, J.; Wolter, M.; Fox, A. et al

in Electronics Letters (2004), 40(1), 78-80

The performance of unpassivated AlGaN=GaN=SiC HEMTs prepared on different MOVPE grown layer structures is reported. An overall improvement of device characteristics using doped structures in comparison to ... [more ▼]

The performance of unpassivated AlGaN=GaN=SiC HEMTs prepared on different MOVPE grown layer structures is reported. An overall improvement of device characteristics using doped structures in comparison to undoped counterpart is observed. This can be demonstrated by IDS of 0.86 and 1.33 A=mm, gm of 220 and 273 mS=mm, fT of 33 and 43 GHz and fmax of 54 and 61 GHz for 0.3 mm gate length devices on undoped and doped structures, respectively. The DC=pulsed I–V characteristics as well as power measurements show insignificant RF dispersion of HEMTs on doped structures. These results underline the advantage of doped layer structures for preparation of high-performance AlGaN=GaN HEMTs. [less ▲]

Detailed reference viewed: 36 (0 UL)