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See detailUltrafast and Highly-Sensitive Photodetectors with Recessed Electrodes Fabricated on Low-Temperature-Grown GaAs
Mikulics, M.; Wu, S.; Marso, Michel UL et al

in IEEE Photonics Technology Letters (2006), 18 (2006)(5-6), 820-822

We have fabricated and characterized ultrafast metal–semiconductor–metal (MSM) photodetectors with recessed electrodes, based on low-temperature-grown GaAs. The new recessed-electrode MSM geometry led to ... [more ▼]

We have fabricated and characterized ultrafast metal–semiconductor–metal (MSM) photodetectors with recessed electrodes, based on low-temperature-grown GaAs. The new recessed-electrode MSM geometry led to an improved electric-field distribution inside the photodetector structure and resulted in a 25% breakdown voltage and sensitivity increase with simultaneous four-fold reduction of capacitance, as compared to the identical MSM devices with planar electrodes. Time-resolved studies performed using 100-fs-duration laser pulses showed that recessed-electrode MSMs exhibited 1.0-ps-wide photoresponse transients with no slow after-pulse tails and their photoresponse time was 0.9 ps. The improved transient photoresponse parameters are the main advantages of the recessed-electrode geometry. [less ▲]

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See detailPhotomixers fabricated on nitrogen-ion-implanted GaAs
Mikulics, M.; Marso, Michel UL; Cámara Mayorga, I. et al

in Applied Physics Letters (2005), 87(4), 41106-1-3

We report on fabrication and measurement of photomixers based on nitrogen-ion-implanted GaAs. We used energies of 500 keV, 700 keV, and 880 keV to implant N+ ions into GaAs substrates with an ion ... [more ▼]

We report on fabrication and measurement of photomixers based on nitrogen-ion-implanted GaAs. We used energies of 500 keV, 700 keV, and 880 keV to implant N+ ions into GaAs substrates with an ion concentration of 3 1012 cm−2. The resulting material exhibited 110 fs carrier lifetime due to implantation-induced defects. Our photomixers were fabricated as metal-semiconductor-metal devices, placed at the feed point of a broadband antenna. Optoelectronic measurements were performed in the wavelength range between 350 nm and 950 nm. In comparison to their counterparts photomixers fabricated on low-temperature-grown GaAs the N+-implanted GaAs photomixers exhibit improvements on both the output power and responsivity. A maximal responsivity of above 100 mA/W was achieved and we did not observe any dependence of the mixer cut-off frequency on the bias voltage. These characteristics make N+-implanted GaAs the material of choice for efficient optoelectronic photomixers. [less ▲]

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See detailUltrafast Low-Temperature-Grown Epitaxial GaAs Photodetectors Transferred on Flexible Plastic Substrates
Mikulics, M.; Adam, R.; Marso, Michel UL et al

in IEEE Photonics Technology Letters (2005), 17(8), 1725-1727

We demonstrate low-temperature (LT)-grown GaAs photodetectors transferred on flexible polyethylene terephthalate (PET) plastic substrates. The LT-GaAs layer was patterned into 20 20 m2 chips, which after ... [more ▼]

We demonstrate low-temperature (LT)-grown GaAs photodetectors transferred on flexible polyethylene terephthalate (PET) plastic substrates. The LT-GaAs layer was patterned into 20 20 m2 chips, which after placing on the PET substrates were integrated with coplanar strip transmission lines. The devices exhibit low dark currents ( 2 10 8 A), subpicosecond photoresponse time, and signal amplitudes up to 0.9 V at the bias voltage of 80 V and under laser beam excitation power of 8 mW at 810-nm wavelength. At the highest bias ( 80 V) level, an increase of the response time (up to 1.3 ps) was observed and attributed to the influence of heating effects due to low thermal conductivity of PET. Our LT-GaAs-on-PET photodetectors withstand hundredfold mechanical bending of the substrate and are intended for applications in hybrid optoelectronic circuits fabricated on noncrystalline substrates, in terahertz imaging, and in biology-related current-excitation tests. [less ▲]

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See detailUltrafast Phenomena in Freestanding LT-GaAs Devices
Marso, Michel UL; Mikulics, M.; Adam, R. et al

in Acta Physica Polonica A (2005), VOL 107; PART 1

We report on the fabrication and high-frequency performance of our photodetectors and photomixers based on freestanding low-temperature-grown GaAs. The MBE-grown low-temperature GaAs layers are lifted ... [more ▼]

We report on the fabrication and high-frequency performance of our photodetectors and photomixers based on freestanding low-temperature-grown GaAs. The MBE-grown low-temperature GaAs layers are lifted from the native GaAs substrate and transferred on top of variety of host substrates. The freestanding devices exhibit breakdown electrical ¯elds above 200 kV/cm and dark currents below 3 £ 10¡7 A at 100 V bias. Device photoresponse shows 0.55 ps wide electrical transients with voltage amplitudes up to 1.3 V, measured using an electro-optical sampling technique with 100 fs wide laser pulses. Photomixing experiments at 460 GHz yield a 9 times higher output power for the freestanding device on Si/SiO2 host substrate compared to the native substrate. [less ▲]

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See detailGeneration of 1 THz radiation by photomixing in low-temperature-grown MBE GaAs
Mikulics, M.; Camara, I.; Marso, Michel UL et al

in Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04 (2004)

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See detailFabrication and performance of hybrid photoconductive devices based on freestanding LT-GaAs, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII,
Adam, R.; Mikulics, M.; Wu, S. et al

in Proceedings of SPIE (2004), 5353 (2004)

We report on fabrication and high-frequency performance of our photodetectors and photomixers based on freestanding low-temperature-grown GaAs (LT-GaAs). In our experiments, the LT-GaAs/AlAs bilayers were ... [more ▼]

We report on fabrication and high-frequency performance of our photodetectors and photomixers based on freestanding low-temperature-grown GaAs (LT-GaAs). In our experiments, the LT-GaAs/AlAs bilayers were grown on 2-inch diameter, semi-insulating GaAs wafers by a molecular beam epitaxy. Next, the bilayer was patterned to form 10 × 10 μm2 to 150 × 150 μm2 structures using photolithography and ion beam etching. The AlAs layer was then selectively etched in diluted HF solution, and the LT-GaAs device was lifted from its substrate and transferred on top of a variety of substrates including Si, MgO/YBaCuO, Al2O3, and a plastic foil. Following the transfer, metallic coplanar transmission lines were fabricated on top of the LT-GaAs structure, forming a metal semiconductor-metal photodetectors or photomixer structures. Our freestanding devices exhibited above 200 V breakdown voltages and dark currents at 100 V below 3×10-7 A. Device photoresponse was measured using an electro-optic sampling technique with 100-fs-wide laser pulses at wavelengths of 810 nm and 405 nm as the excitation source. For 810-nm excitation, we measured 0.55 ps-wide electrical transients with voltage amplitudes of up to 1.3 V. The signal amplitude was a linear function of the applied voltage bias, as well as a linear function of the laser excitation power, below well-defined saturation thresholds. Output power from the freestanding photomixers was measured with two beam laser illumination experimental setup. Reported fabrication technique is suitable for the LT-GaAs integration with a range of semiconducting, superconducting, and organic materials for high-frequency hybrid optoelectronic applications. [less ▲]

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See detailGeneration of 460 GHz radiation by photomixing in low-temperature-grown MBE GaAs
Mikulics, M.; Siebel, F.; Fox, A. et al

in Proc. 4th Intern. Conf. Advanced Semicon. Dev. & Microsystems (2002)

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See detailLow-temperature-grown MBE GaAs for terahertz photomixers
Mikulics, M.; Marso, Michel UL; Fox, A. et al

in EDMO (2001)

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See detailA Novel InAlAs/InGaAs Layer Structure for Monolithically Integrated Photoreceiver,
Hodel, U.; Orzati, A.; Marso, Michel UL et al

in Proc. 2000 Int. Conf. Indium Phosphide and Related Materials (2000)

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See detailAn InAlAs-InGaAs OPFET with Responsivity Above 200 A/W at 1.3 µm Wavelength
Marso, Michel UL; Gersdorf, P.; Fox, A. et al

in IEEE Photonics Technology Letters (1999), 11

The optoelectronic dc and RF behavior of an InAlAs–InGaAs optically controlled field-effect transistor based on a high electron mobility transistor layer structure is investigated at 1.3- um wavelength ... [more ▼]

The optoelectronic dc and RF behavior of an InAlAs–InGaAs optically controlled field-effect transistor based on a high electron mobility transistor layer structure is investigated at 1.3- um wavelength light. The device is backside-illuminated to increase the responsivity. A transistor with 0.3-u m gate length and an active area of 50 x 50 u m2 exhibits a responsivity of 235 A/W, at 11- W incident optical power. The photoconductive response is higher than for an metal–semiconductor–metal photodetector with the same InGaAs absorption layer thickness up to 10 GHz. [less ▲]

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See detail550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs
Kordoš, P.; Förster, A.; Marso, Michel UL et al

in Electronics Letters (1998), 34(1998), 119-120

The authors demonstrate that a 550GHz bandwidth photodetector can be fabricated on low-temperature grown MBE GaAs. The pulse response shows 0.4 and 0.6ps rise and fall times, respectively. The bandwidth ... [more ▼]

The authors demonstrate that a 550GHz bandwidth photodetector can be fabricated on low-temperature grown MBE GaAs. The pulse response shows 0.4 and 0.6ps rise and fall times, respectively. The bandwidth is in agreement with a value calculated using a carrier lifetime of 0.2ps, measured by femtosecond time-resolved reflectivity, and a capacitance of 0.014fF/um2, determined from microwave measurements. The device bandwidth is RC limited. [less ▲]

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See detailSpace-charge controlled conduction in low-temperature-grown molecular-beam epitaxial GaAs,
Kordoš, P.; Marso, Michel UL; Förster, A. et al

in Applied Physics Letters (1997), 71

Current transport in low-temperature (LT) molecular-beam epitaxial GaAs grown at 200-300 °C on an n+ GaAs substrate is studied by means of current–voltage–temperature characteristics. The resistivity of ... [more ▼]

Current transport in low-temperature (LT) molecular-beam epitaxial GaAs grown at 200-300 °C on an n+ GaAs substrate is studied by means of current–voltage–temperature characteristics. The resistivity of LT GaAs at low electric fields is rho>108 Ohm cm, much higher than resulting from van der Pauw measurements. It is found that the measured resistivity decreases with increasing the LT GaAs thickness. This is explained by space-charge effect in the vicinity of n+/LT GaAs junction and subsequent suppression of hopping conduction in the high-field junction region. [less ▲]

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See detailOptoelectronic DC and RF behaviour of InAlAs/InGaAs based HEMTs at 1.3µm wavelength
Marso, Michel UL; Fox, A.; Förster, A. et al

in Proc. 3rd Asia-Pacific Conference on Communications, Sydney, Australia (1997)

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