References of "De Wild, Jessica 50001548"
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See detailSynthesis, theoretical and experimental characterisation of thin film Cu2Sn1-xGexS3 ternary alloys (x = 0 to 1): Homogeneous intermixing of Sn and Ge
Robert, Erika UL; Gunder, René; De Wild, Jessica UL et al

in Acta Materialia (2018), 151

Cu2Sn1-xGexS3 is a p-type semiconductor alloy currently investigated for use as an absorber layer in thin film solar cells. The aim of this study is to investigate the properties of this alloy in thin ... [more ▼]

Cu2Sn1-xGexS3 is a p-type semiconductor alloy currently investigated for use as an absorber layer in thin film solar cells. The aim of this study is to investigate the properties of this alloy in thin film form in order to establish relationships between group IV composition and structural, vibrational and opto-electronic properties. Seven single phase Cu2Sn1-xGexS3 films are prepared from x ¼ 0 to 1, showing a uniform distribution of Ge and Sn laterally and in depth. The films all show a monoclinic crystal structure. The lattice parameters are extracted using Le Bail refinement and show a linear decrease with increasing Ge content. Using density-functional theory with hybrid functionals, we calculate the Raman active phonon frequencies of Cu2SnS3 and Cu2GeS3. For the alloyed compounds, we use a virtual atom approximation. The shift of the main Raman peak from x ¼ 0 to x ¼ 1 can be explained as being half due to the change in atomic masses and half being due to the different bond strength. The bandgaps of the alloys are extracted from photoluminescence measurements and increase linearly from about 0.90 to 1.56 eV with increasing Ge. The net acceptor density of all films is around 1018 cm 3. These analyses have established that the alloy forms a solid solution over the entire composition range meaning that intentional band gap grading should be possible for future absorber layers. The linear variation of the unit cell parameters and the band gap with group IV content allows composition determination by scattering or optical measurements. Further research is required to reduce the doping density by two orders of magnitude in order to improve the current collection within a solar cell device structure. [less ▲]

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See detailSilver Doped Cu2SnS3 Absorber Layers for Solar Cells Application
De Wild, Jessica UL; Babbe, Finn UL; Robert, Erika UL et al

in IEEE Journal of Photovoltaics (2017)

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See detailOptoelectronic and Spectroscopic Characterization of Vapour-Transport Grown Cu2ZnSnS4 Single Crystals
Tat Ming Ng; Weller, Mark T.; Kissling, Gabriela P. et al

in Journal of Materials Chemistry A (2017)

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See detailValence band splitting in Cu2(Sn,Ge, Si)S3: effect on optical absorption spectra
De Wild, Jessica UL; Kalesaki, Efterpi UL; Wirtz, Ludger UL et al

in Physica Status Solidi. Rapid Research Letters (2017)

We perform a detailed analysis of the valence band splitting (VBS) effect on the absorption spectra of monoclinic Cu2(Sn,Ge,Si)S3 combining theory and experiment. We cal- culate the imaginary part of the ... [more ▼]

We perform a detailed analysis of the valence band splitting (VBS) effect on the absorption spectra of monoclinic Cu2(Sn,Ge,Si)S3 combining theory and experiment. We cal- culate the imaginary part of the dielectric function for all three compounds using hybrid functionals and maximally lo- calized Wannier functions in remarkably dense k-meshes to ensure an accurate description of the low energy spectral regime. We find that the VBS will affect the absorption spectra of these materials leading to multiple absorption onsets. Our experimental spectra on Cu2(Sn,Ge)S3, analysed using both Tauc plots and inflection points, verify this prediction. A good agreement between theory and experiment in terms of VBS values is recorded. [less ▲]

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See detailCrystallographic and optoelectronic properties of the novel thin film absorber Cu2GeS3
Robert, Erika UL; De Wild, Jessica UL; Colombara, Diego UL et al

in Proceedings of SPIE (2016, September)

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See detailChemical stability of the Cu2SnS3/Mo interface
De Wild, Jessica UL; Robert, Erika UL; Dale, Phillip UL

Poster (2016, June)

Cu2SnS3 is an earth abundant semiconductor researched for photovoltaic applications. Due to the small energy difference in the Sn2+/4+ oxidation states and low free energy of MoS2, the Cu2SnS3/Mo ... [more ▼]

Cu2SnS3 is an earth abundant semiconductor researched for photovoltaic applications. Due to the small energy difference in the Sn2+/4+ oxidation states and low free energy of MoS2, the Cu2SnS3/Mo interface is unstable and Cu2SnS3 decomposes. The interface is stabilized by growing Cu2SnS3 on a thin MoS2 layer. Photoluminescence occurs only at the back of the Cu2SnS3 layers when grown on MoS2 and no quantifiable amounts of Cu and Sn are measured at the MoS2 substrate. The quenching of emission of Cu2SnS3 grown on Mo is due to binary sulfides formed in presence of Mo which are not formed when Cu2SnS3 is grown on MoS2. [less ▲]

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See detailSecondary phase formation during monoclinic Cu2SnS3 growth for solar cell application
De Wild, Jessica UL; Robert, Erika UL; El Adib, Brahime et al

in Solar Energy Materials and Solar Cells (2016)

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See detailElectrodeposition and selenization of brass/tin/germanium multilayers for Cu2Zn(Sn1-xGex)Se4 thin film photovoltaic devices
Clauwaert, Kwinten; Goossens, Maaike; De Wild, Jessica UL et al

in Electrochimica Acta (2016), 198

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See detail13.3% efficient solution deposited Cu(In,Ga)Se 2 solar cells processed with different sodium salt sources
Berner, Ulrich; Colombara, Diego UL; De Wild, Jessica UL et al

in Progress in Photovoltaics Research and Applications (2015)

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See detailCu2SnS3-based thin film solar cell from electrodeposition-annealing route
Robert, Erika UL; De Wild, Jessica UL; Dale, Phillip UL

in IEEE Proceedings (2015, June)

Cu2SnS3 is a new emerging material for thin film photovoltaics, composed of three abundant and non toxic elements. Its p-type conductivity, bandgap of 0.93 eV and absorption coefficient above 104 cm-1 ... [more ▼]

Cu2SnS3 is a new emerging material for thin film photovoltaics, composed of three abundant and non toxic elements. Its p-type conductivity, bandgap of 0.93 eV and absorption coefficient above 104 cm-1 make it a promising absorber layer for p-n heterojunction devices. In this study, the Cu2SnS3 absorber is synthesized from electroplated stacked Cu-Sn precursors further annealed in chalcogen atmosphere (S and SnS). The electroplating has been processed on upscaled 45 x 50 mm2 Mo-coated soda-lime glass substrates on which the metallic layers seem to delaminate easily from the substrate due to increased stress between them. To reduce this stress the precursors are subjected to pre-alloying treatments. The effects of pre-alloying are investigated in terms of final absorber morphology, composition and crystal structure. Precursors are annealed at 250°C and 350°C. The prealloying at 350°C is far above the melting point of Sn around 230°C and these samples show de-wetting. The as-deposited and 250°C pre-alloyed samples are processed further into absorber layers and solar cells. The finished absorber layers show mainly monoclinic Cu2SnS3. Absorbers completed into devices show a device power conversion efficiency of 0.64%. The spectral response suggests the existence of two bandgaps, consistent with previous results. [less ▲]

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