References of "Arens-Fischer, R"
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See detailFabrication of Laterally Displaced Porous Silicon Filters
Marso, Michel UL; Wolter, M.; Arens-Fischer, R. et al

in Thin Solid Films (2001), 382(2001), 218-221

Porous silicon superlattices have been used to manufacture laterally displaced dielectric filters with different optical properties on one substrate. Two different fabrication processes for two-colour ... [more ▼]

Porous silicon superlattices have been used to manufacture laterally displaced dielectric filters with different optical properties on one substrate. Two different fabrication processes for two-colour microfilter arrays are presented. Both methods overcome the problem of non-uniform optical properties of the well-known procedure where two filter stacks are grown one upon another, with subsequent partial removal of the upper filter by reactive ion etching. The novel methods give uniform optical properties of the two filter areas, profiting from the main property of the formation process of porous silicon: the formation of porous silicon occurs only at the porous silicon substrate interface. [less ▲]

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See detailFormation of laterally displaced porous silicon filters using different fabrication methods
Marso, Michel UL; Wolter, M.; Arens-Fischer, R. et al

in Proceedings of the 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems (2000)

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See detailElectrical Control of the Reflectance of Porous Silicon Layers
Thönissen, M.; Marso, Michel UL; Arens-Fischer, R. et al

in Journal of Porous Materials (2000), 7((1/2/3),), 205-208

In this paper we demonstrate the filling of porous silicon (PS) layers with liquid crystals (LC’s) in order to control the reflectance electrically. The preparation of PS and the choice of the right group ... [more ▼]

In this paper we demonstrate the filling of porous silicon (PS) layers with liquid crystals (LC’s) in order to control the reflectance electrically. The preparation of PS and the choice of the right group of LC’s will be presented. Especially an oxidation of PS is necessary so that the methods and parameters of oxidation will also be discussed. As a first result the increasing and decreasing of the thickness oscillations in the reflectance as a function of the applied voltage can be observed. [less ▲]

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See detailFormation of Porous Silicon Filter Structures with Different Properties on Small Areas
Arens-Fischer, R.; Krüger, M.; Thönissen, M. et al

in Journal of Porous Materials (2000), 7 (1/2/3)

Porous silicon (PS) layer systems have a broad range of possible applications. An advantage is the good control of the refractive index and the etch rate of the layers by the applied current density and ... [more ▼]

Porous silicon (PS) layer systems have a broad range of possible applications. An advantage is the good control of the refractive index and the etch rate of the layers by the applied current density and the time respectively. For micro-optical devices you need patterned PS. For some optical devices it is not sufficient to have only one filter but it is necessary to form filters with different properties on a small area. We applied a method (M. Frank, U.B. Schallenberg, N. Kaiser, and W. Buß, in Conference on Miniaturized Systems with Microoptics and Micromechanics, edited by M.E. Moamedi, L.J. Hornbeck, and K.S.J. Pister (SPIE, San Jose, 1997), SPIE Proceedings Series 3008, p. 265) to PS which fits this goal by the following steps: fabrication of the desired reflectors below each other and partial removal of upper reflectors with reactive ion etching (RIE). The technological aspects of patterning PS after the fabrication are an important topic of this work. Problems are discussed in detail and solutions are given. [less ▲]

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See detailIntegrated photometer with porous silicon interference filters
Hunkel, D.; Marso, Michel UL; Butz, R. et al

in Materials Science & Engineering : A (2000), B69-70((2000)), 100-103

Porous silicon transmission interference filters with laterally varying transmission wavelengths are used to manufacture a photometer. Because of the linear varying transmission characteristic of the ... [more ▼]

Porous silicon transmission interference filters with laterally varying transmission wavelengths are used to manufacture a photometer. Because of the linear varying transmission characteristic of the filter it is possible to measure, beyond small regions of the porous layer, the correlated spectral photo current. It is therefore necessary to bring up a series of ohmic metal contacts along the porous filter. Between two neighbouring contacts one can measure the spectral photo current of the transmission wavelength at this specific point of the surface. By measuring multiple pairs of contacts, the whole spectrum between 400 and 1100 nm wavelength can be recorded. First results of the resolution capability and sensitivity are demonstrated. [less ▲]

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See detailInterference filters from porous silicon with laterally varying wavelength of reflection
Hunkel, D.; Butz, R.; Arens-Fischer, R. et al

in Journal of Luminescence (1999), 80(1999), 133-136

Porous silicon reflection interference filters of Bragg type consists of up to 40 quarter wave layers with alternating high- and low-refraction index. The refraction index depends on the porosity of the ... [more ▼]

Porous silicon reflection interference filters of Bragg type consists of up to 40 quarter wave layers with alternating high- and low-refraction index. The refraction index depends on the porosity of the silicon. The reflection wavelength can vary over a wide range and depends on the thickness and refraction index of the porous layers. A laterally continuously varying wavelength with linear profile of the filter can be achieved by manipulating the porosity and thickness of the silicon in the lateral direction. Our approach is to vary the Fermi level laterally by applying a potential parallel to the surface of the wafer. The slope of the Fermi level is easily controlled by the magnitude of the potential. The lateral current density and thus the porosity and thickness is related to the potential difference between the laterally varying Fermi level and the potential induced by the counter electrode. This relation is the well-known current-voltage characteristic of a Silicon hydrofluoric acid contact. The linearity of the etch profile across the wafer is demonstrated and the properties of preliminary reflection filters are shown. [less ▲]

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See detailColor-Sensistive Si-Photodiode Using Porous Silicon Interference Filters
Krüger, M.; Berger, M. G.; Marso, Michel UL et al

in Japanese Journal of Applied Physics (1997), 36(1997), 24-26

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See detailColor-Sensitive Photodetector Based on Porous Silicon Superlattices
Krüger, M.; Marso, Michel UL; Berger, M. G. et al

in Thin Solid Films (1997), 297(1997), 241-244

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See detailExtended Quantum Model For Porous Silicon Formation
Münder, H.; Frohnhoff, St; Berger, M. G. et al

in Mat. Res. Soc. Symp. Proc. Vol. 358 (1995)

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