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See detailMonolithic Integration of Ultrafast Photodetector and MESFET in the GaN Material System
Mikulics, M.; Kordoš, P.; Gregušová, D. et al

in IEEE Photonics Technology Letters (2011), 23(17), 1189-1191

We have fabricated and characterized ultrafast metal–semiconductor–metal (MSM) photodetectors integrated with metal–semiconductor–field-effect-transistors (MESFETs) integrated in coplanar strip lines in ... [more ▼]

We have fabricated and characterized ultrafast metal–semiconductor–metal (MSM) photodetectors integrated with metal–semiconductor–field-effect-transistors (MESFETs) integrated in coplanar strip lines in the GaN/AlN/SiC material system. We recorded electrical transients of the single photodetector as short as 0.9 ps wide by optoelectric pump–probe measurements using 360-nm-wavelength and 100-fs-duration laser pulses. Electric photoresponse transients of the photodetector with 6-mV peak amplitude were amplified by the MESFET, resulting in 4-ps-wide and 35-mV peak amplitude signals. This monolithically integrated optoelectronic circuit is presented as a potential candidate for high-speed ultraviolet optoelectronics [less ▲]

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See detailUltrafast and Highly-Sensitive Photodetectors with Recessed Electrodes Fabricated on Low-Temperature-Grown GaAs
Mikulics, M.; Wu, S.; Marso, Michel UL et al

in IEEE Photonics Technology Letters (2006), 18 (2006)(5-6), 820-822

We have fabricated and characterized ultrafast metal–semiconductor–metal (MSM) photodetectors with recessed electrodes, based on low-temperature-grown GaAs. The new recessed-electrode MSM geometry led to ... [more ▼]

We have fabricated and characterized ultrafast metal–semiconductor–metal (MSM) photodetectors with recessed electrodes, based on low-temperature-grown GaAs. The new recessed-electrode MSM geometry led to an improved electric-field distribution inside the photodetector structure and resulted in a 25% breakdown voltage and sensitivity increase with simultaneous four-fold reduction of capacitance, as compared to the identical MSM devices with planar electrodes. Time-resolved studies performed using 100-fs-duration laser pulses showed that recessed-electrode MSMs exhibited 1.0-ps-wide photoresponse transients with no slow after-pulse tails and their photoresponse time was 0.9 ps. The improved transient photoresponse parameters are the main advantages of the recessed-electrode geometry. [less ▲]

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See detailUltrafast Phenomena in Freestanding LT-GaAs Devices
Marso, Michel UL; Mikulics, M.; Adam, R. et al

in Acta Physica Polonica A (2005), VOL 107; PART 1

We report on the fabrication and high-frequency performance of our photodetectors and photomixers based on freestanding low-temperature-grown GaAs. The MBE-grown low-temperature GaAs layers are lifted ... [more ▼]

We report on the fabrication and high-frequency performance of our photodetectors and photomixers based on freestanding low-temperature-grown GaAs. The MBE-grown low-temperature GaAs layers are lifted from the native GaAs substrate and transferred on top of variety of host substrates. The freestanding devices exhibit breakdown electrical ¯elds above 200 kV/cm and dark currents below 3 £ 10¡7 A at 100 V bias. Device photoresponse shows 0.55 ps wide electrical transients with voltage amplitudes up to 1.3 V, measured using an electro-optical sampling technique with 100 fs wide laser pulses. Photomixing experiments at 460 GHz yield a 9 times higher output power for the freestanding device on Si/SiO2 host substrate compared to the native substrate. [less ▲]

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See detailUltrafast Low-Temperature-Grown Epitaxial GaAs Photodetectors Transferred on Flexible Plastic Substrates
Mikulics, M.; Adam, R.; Marso, Michel UL et al

in IEEE Photonics Technology Letters (2005), 17(8), 1725-1727

We demonstrate low-temperature (LT)-grown GaAs photodetectors transferred on flexible polyethylene terephthalate (PET) plastic substrates. The LT-GaAs layer was patterned into 20 20 m2 chips, which after ... [more ▼]

We demonstrate low-temperature (LT)-grown GaAs photodetectors transferred on flexible polyethylene terephthalate (PET) plastic substrates. The LT-GaAs layer was patterned into 20 20 m2 chips, which after placing on the PET substrates were integrated with coplanar strip transmission lines. The devices exhibit low dark currents ( 2 10 8 A), subpicosecond photoresponse time, and signal amplitudes up to 0.9 V at the bias voltage of 80 V and under laser beam excitation power of 8 mW at 810-nm wavelength. At the highest bias ( 80 V) level, an increase of the response time (up to 1.3 ps) was observed and attributed to the influence of heating effects due to low thermal conductivity of PET. Our LT-GaAs-on-PET photodetectors withstand hundredfold mechanical bending of the substrate and are intended for applications in hybrid optoelectronic circuits fabricated on noncrystalline substrates, in terahertz imaging, and in biology-related current-excitation tests. [less ▲]

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See detailFabrication and performance of hybrid photoconductive devices based on freestanding LT-GaAs, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII,
Adam, R.; Mikulics, M.; Wu, S. et al

in Proceedings of SPIE (2004), 5353 (2004)

We report on fabrication and high-frequency performance of our photodetectors and photomixers based on freestanding low-temperature-grown GaAs (LT-GaAs). In our experiments, the LT-GaAs/AlAs bilayers were ... [more ▼]

We report on fabrication and high-frequency performance of our photodetectors and photomixers based on freestanding low-temperature-grown GaAs (LT-GaAs). In our experiments, the LT-GaAs/AlAs bilayers were grown on 2-inch diameter, semi-insulating GaAs wafers by a molecular beam epitaxy. Next, the bilayer was patterned to form 10 × 10 μm2 to 150 × 150 μm2 structures using photolithography and ion beam etching. The AlAs layer was then selectively etched in diluted HF solution, and the LT-GaAs device was lifted from its substrate and transferred on top of a variety of substrates including Si, MgO/YBaCuO, Al2O3, and a plastic foil. Following the transfer, metallic coplanar transmission lines were fabricated on top of the LT-GaAs structure, forming a metal semiconductor-metal photodetectors or photomixer structures. Our freestanding devices exhibited above 200 V breakdown voltages and dark currents at 100 V below 3×10-7 A. Device photoresponse was measured using an electro-optic sampling technique with 100-fs-wide laser pulses at wavelengths of 810 nm and 405 nm as the excitation source. For 810-nm excitation, we measured 0.55 ps-wide electrical transients with voltage amplitudes of up to 1.3 V. The signal amplitude was a linear function of the applied voltage bias, as well as a linear function of the laser excitation power, below well-defined saturation thresholds. Output power from the freestanding photomixers was measured with two beam laser illumination experimental setup. Reported fabrication technique is suitable for the LT-GaAs integration with a range of semiconducting, superconducting, and organic materials for high-frequency hybrid optoelectronic applications. [less ▲]

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See detailFreestanding LT GaAs as a subpicosecond photoconductive switch and high-voltage photomixer
Mikulics, M.; Siebel, F.; Zheng, X. et al

in Abstract book of 4th Symposium on Non-Stoichiometric III-V Compounds (2002), Physik Mikrostrukturierter Halbleiter 27

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