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See detailEnhanced Schottky Barriers on n-In.53Ga.47As Using pInGaAs, GaAs, InP and InGaP Surface layers
Kordoš, P.; Marso, Michel UL; Meyer, R. et al

in Proceedings of the 4th International Conference on InP and Related Compounds, Newport, Rhode Island, USA (1992)

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See detailSchottky Barrier Height Enhancement on n-In0.53Ga0.47As
Kordoš, P.; Marso, Michel UL; Meyer, R. et al

in Journal of Applied Physics (1992), 72(1992), 2347-2355

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See detailSchottky Contacts on n-In0.53Ga0.47As with Enhanced Barriers by Counter-Doped Interfacial Layers,
Kordoš, P.; Marso, Michel UL; Meyer, R. et al

in IEEE Transactions on Electron Devices (1992), 39(1992), 1970-1972

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See detailn-InGaAs Schottky Diode with Current Transport along 2DEG Channel
Kordoš, P.; Marso, Michel UL; Fox, A. et al

in Electronics Letters (1992), 28(1992), 1689-1690

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See detailBarrier Height Enhancement of n-In0.53Ga0.47As Schottky Diodes Grown by MOCVD Technique
Kordoš, P.; Marso, Michel UL; Meyer, R. et al

in Electronics Letters (1991), 27(1991), 1759-1760

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See detailQuasi-Schottky Diodes on (n)In.53Ga.47As With Barrier Heights of 0.6eV
Marso, Michel UL; Kordoš, P.; Meyer, R. et al

in Proceedings of the the MRS Fall Meeting, Symposium E, Boston, MA, USA (1991)

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