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See detail0.1 µm T-gate Al-free InP/InGaAs/InP pHEMTs for W-Band Applications Using a Nitrogen Carrier for LP-MOCVD Growth
Schimpf, K.; Sommer, M.; Horstmann, M. et al

in IEEE Electron Device Letters (1997), 18

We report on the dc and RF performance of HEMT’s based on the Al-free material system InP/InGaAs/InP. These structures were grown by LP-MOCVD using a nitrogen carrier. The influence of gate length and ... [more ▼]

We report on the dc and RF performance of HEMT’s based on the Al-free material system InP/InGaAs/InP. These structures were grown by LP-MOCVD using a nitrogen carrier. The influence of gate length and channel composition on the performance of these devices is investigated.We demonstrate that optimum dc and RF performance using highly strained channels can be obtained only if additional composite channels are grown. The cutoff frequencies fT =160 GHz and fmax=260 GHz for a 0.1- um T-gate device indicate the suitability of our devices for W-Band applications. [less ▲]

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See detailElectrical Behaviour of the InP/InGaAs Based MSM-2DEG Diode
Marso, Michel UL; Horstmann, M.; Hardtdegen, H. et al

in Solid-State Electronics (1997), 41(1997), 25-31

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See detailColor-Sensitive Photodetector Based on Porous Silicon Superlattices
Krüger, M.; Marso, Michel UL; Berger, M. G. et al

in Thin Solid Films (1997), 297(1997), 241-244

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See detailColor-Sensistive Si-Photodiode Using Porous Silicon Interference Filters
Krüger, M.; Berger, M. G.; Marso, Michel UL et al

in Japanese Journal of Applied Physics (1997), 36(1997), 24-26

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See detailFrequency Response of InP/InGaAs MSM Photodetector with Current Transport Along 2DEG
Horstmann, M.; Hollfelder, M.; Muttersbach, J. et al

in Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany (1996)

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See detailNovel MSM-2DEG PD/HEMT Photoreceiver for 10 Gbit/s Operation
Horstmann, M.; Muttersbach, J.; v.d.Hart, A. et al

in Proceedings of the 26th European Solid State Devices Research Conference, Bologna, Italy (1996)

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See detailIntegration of Porous Silicon Interference Filters in Si-Photodiodes
Krüger, M.; Berger, M. G.; Marso, Michel UL et al

in Proceedings of the 26th European Solid State Devices Research Conference, Bologna, Italy (1996)

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See detailNovel HEMT layout: The RoundHEMT
Marso, Michel UL; Schimpf, K.; Fox, A. et al

in Electronics Letters (1995), 31(1995), 589-591

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See detailIon Sensitive Field Effect Transistors with Ultrathin Langmuir-Blodgett Membranes
Schöning, M. J.; Sauke, M.; Steffen, A. et al

in Sensors and actuators. B, Chemical (1995), 26-27(1995), 325-328

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See detailExtended Quantum Model For Porous Silicon Formation
Münder, H.; Frohnhoff, St; Berger, M. G. et al

in Mat. Res. Soc. Symp. Proc. Vol. 358 (1995)

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See detailNovel InP/GaInAs Photodetector for Integration in HEMT Circuits
Horstmann, M.; Marso, Michel UL; Schimpf, K. et al

in Proceedings of the 25th European Solid State Devices Research Conference, Den Haag, The Netherlands (1995)

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See detailAn Extended Quantum Model for Porous Silicon Formation
Frohnhoff, St; Marso, Michel UL; Berger, M. G. et al

in Journal of the Electrochemical Society (1995), 142(1995), 615-620

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See detailInP/InGaAs Photodetector Based on a High Electron Mobility Transistor Layer Structure: Its Response at 1.3 µm wavelength
Horstmann, M.; Marso, Michel UL; Fox, A. et al

in Applied Physics Letters (1995), 67(1995), 106-108

We report on the investigation of the room-temperature optoelectronic behavior of a metal–semiconductor–metal two-dimensional electron gas photodiode based on the two-dimensional electron gas of a high ... [more ▼]

We report on the investigation of the room-temperature optoelectronic behavior of a metal–semiconductor–metal two-dimensional electron gas photodiode based on the two-dimensional electron gas of a high electron mobility transistor structure. The photodetector is fabricated in the InP/InGaAs material system, without use of Al-containing layers. Optoelectronic measurements on a device with a finger spacing of 3 mm show a full width at half-maximum (FWHM) of the pulse response of <60 ps, which is the resolution limit of our measurement equipment. Low-temperature measurements at 40 K with electro-optical sampling at a wavelength of 890 nm show a FWHM of 1 ps. [less ▲]

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See detailA Novel InP/InGaAs Photodetector Based on a 2DEG layer structure
Marso, Michel UL; Horstmann, M.; Rüders, F. et al

in Proceedings of the 6th International Conference on InP and Related Compounds, Santa Barbara, California USA (1994)

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See detailOvergrown PBT's: Calculations and Measurements
Schüppen, A.; Marso, Michel UL; Lüth, H.

in IEEE Transactions on Electron Devices (1994), 41(1994), 751-760

The device parameters of overgrown silicon permeable base transistors (PBT’s) have been systematically investigated by two dimensional drift diffusion simulations and analytical calculations. Hence some ... [more ▼]

The device parameters of overgrown silicon permeable base transistors (PBT’s) have been systematically investigated by two dimensional drift diffusion simulations and analytical calculations. Hence some design rules arise for optimizing the high frequency performance of PBT’s. The calculations indicate the source-drain distance as the essential PBT parameter, which should be kept below 200 nm in order to expect unity current- gain frequencies fT over 50 GHz. In addition, PBT’s with buried monocrystalline CoSiz -gates have been fabricated by high dose cobalt ion implantation through a grid-like mask into MOS-compatible n -type Si(lO0). Measurements revealed a transconductance of 70 mS/mm and a fT value of 6 GHz. The comparison between measured and simulated output characteristics shows good agreement. [less ▲]

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See detailPhosphorus Redistribution During the Formation of Buried CoSi2 Layers by Ion Beam Synthesis,
Schüppen, A.; Jebasinski, R.; Mantl, S. et al

in Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms (1994), 84

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See detailA Novel InGaAs Schottky-2DEG Diode
Marso, Michel UL; Kordoš, P.; Fox, A. et al

in Proceedings of the 5th International Conference on InP and Related Compounds, Paris, France (1993)

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See detailOptimization of Strained Ga1-xInxAs/InP Heterostructures Towards High Channel Conductivity for HEMT Application
Meyer, R.; Hardtdegen, H.; Leuther, A. et al

in Proceedings of the 5th International Conference on InP and Related Compounds, Paris, France (1993)

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See detailSubmicrometer Silicon Permeable Base Transistors with Buried CoSi2 Gates
Schüppen, A.; Vescan, L.; Marso, Michel UL et al

in Electronics Letters (1993), 29(1993), 215-217

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See detailEnhancement of the Schottky Barrier Height on n-InGaAs by Thin InP Interlayers
Kordoš, P.; Marso, Michel UL; Lüth, H.

in Journal of Electrical Engineering = Elektrotechnický Casopis (1992), 44(1992), 367-371

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